Germanium (Ge) SpringerLink

Germanium (Ge) is a gray-white metalloid, and in its pure state is crystalline and brittle, retaining its luster in air at room temperature. Zone-refining technique has led to production of ultrahigh-purity Ge

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Cited by: 4

GERMANIUM (Ge) Handbook Series on

2019-8-23  Enter words / phrases / DOI / ISBN / keywords / authors / etc. Search. Quick search in Citations. Journal Year Volume Issue Page. Search. Handbook Series on Semiconductor Parameters, pp. 33-57 (1996) No Access. GERMANIUM (Ge) L. E. Vorobyev; L. E. Vorobyev. St. Petersburg State Technical University, Russia. Search for more limestoneby this author

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Germanium Ge SpringerLink

Germanium is a metalloid, having some non-metallic characteristics, but not as marked as in silicon, or boron. It is a very brittle material, quite stable in air up to red heat. Germanium Ge SpringerLink

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Germanium powder, −100 mesh, ≥99.999% trace

Germanium powder, −100 mesh, ≥99.999% trace metals basis CAS Number 7440-56-4. Empirical Formula (Hill Notation) Ge . Molecular Weight 72.64 . EC Number 231-164-3. MDL number MFCD00085310. PubChem Substance ID 24859656. NACRES NA.23

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The Bi−Ge (Bismuth-Germanium) system SpringerLink

Cited by: 10

Germanium SpringerLink

2016-7-7  Germanium has an atomic number of 32 and atomic weight of 72.63. It is both siderophile and volatile, with an electronic structure [Ar]3d 10 4s 2 4p 2.Under the older CAS or IUPAC nomenclature Ge was classified as either group IVA or IVB, an unfortunately confusing situation.

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Germanium crystals ScienceDirect

Germanium (Ge) is the material used in the first transistor invented by Bardeen, Brattain, and Shockley at Bell Laboratories in 1947, a historical landmark in the semiconductor world. With this as a trigger, the semiconductor industry started.

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Why Silicon is preferred over Germanium ?

But there is a disadvantage for Silicon over Germanium. The potential Barrier of Silicon is more compared to Germanium. But if we consider the advantages listed above, we can conclude that Silicon is the best element for the Semiconductor Devices and Applications. However, the first transistor was made of germanium (Ge). 🙂

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Ge-Ti (Germanium-Titanium) SpringerLink

Cited by: 2

Evaluation of the Effects of Dietary Organic

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Gallium, germanium, indium, and other trace and

Keywords. High-tech metals. By-products. Fluid salinity. Sphalerite geothermometer. Fluid inclusions. Homogenisation temperature. GGIMFis thermometer. 1. Introduction. Of the many trace elements commonly found in sphalerite, gallium (Ga), germanium (Ge)

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The Ge-Mn (Germanium-Manganese) system

These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves. Literature searched through 1986. Professor Abbaschian is the ASM/NIST Data Program Category Editor for binary germanium alloys. This is a preview of subscription content, log in to

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Low EOT GeO2 Al2O3 HfO2 on Ge substrate using ultrathin

2014-11-2  Article history: Available online 16 March 2013 Keywords: MOS device Ge MOS HfO2 ALD 1. Introduction Germanium (Ge) is a candidate channel material for sub-16 nm CMOS technology node pMOST devices due to its higher hole (?4) mobility compared with

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Germanium: Epitaxy and its applications ScienceDirect

This stone reviews the most important properties of germanium, gives an insight into the newer techniques and technology for the growth of epitaxial Ge thin layers and focuses on some applications of this material, with a special emphasis on recent achievements in electronics and photovoltaics.

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Germanium Wafers: 2016

2020-1-5  Here we report the observation of germanium oxide microcrystals formed on the surface of tellurium implanted into a germanium substrate. The Ge target used was a (1 0 0) polished single crystalline germanium wafer and the implantation was carried out at room temperature with Te ions at 180 keV and a fluence of 3.6 × 10 15 at/cm 2.

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Why Silicon is preferred over Germanium ?

But there is a disadvantage for Silicon over Germanium. The potential Barrier of Silicon is more compared to Germanium. But if we consider the advantages listed above, we can conclude that Silicon is the best element for the Semiconductor Devices and Applications. However, the first transistor was made of germanium (Ge). 🙂

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US20170069490A1 Atomic layer deposition of

Prior art keywords germanium process according substrate precursor ge Prior art date 2014-03-04 Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Pending Application number US15/123,130 Inventor Wei-Min Li

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Optimization of germanium (Ge) n+/p and p+/n

Optimization of germanium (Ge) n + /p and p + /n junction diodes and sub 380 °c Ge CMOS technology for monolithic three-dimensional integration. Jin Hong Park, Duygu Kuzum, keywords = "Germanium (Ge) junction diode, metal-induced crystallization (MIC), metal-induced dopants activation (MIDA), monolithic 3-D integrated circuit (3-D-IC)",

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Open Repository of National Natural Science Foundation of

2016-12-8  Skip navigation

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Optimization of germanium (Ge) n+/p and p+/n

Optimization of germanium (Ge) n + /p and p + /n junction diodes and sub 380 °c Ge CMOS technology for monolithic three-dimensional integration. Jin Hong Park, Duygu Kuzum, keywords = "Germanium (Ge) junction diode, metal-induced crystallization (MIC), metal-induced dopants activation (MIDA), monolithic 3-D integrated circuit (3-D-IC)",

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(PDF) Germanium: Current and Novel Recovery

Keywords: germanium, residues, by-products, hydrometallurgical processes. 1. Introduction. Germanium (Ge) w as discovered in Freiberg in 1885. One year later, it was isolated from .

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Germanium (Ge) was first discovered and named by the German chemist Winkler in 1886, and then it has been found and detected as a trace element from the plants and animals. After 1960s, the biological function of germanium and mechanism of interaction with

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NIST SRM Order Request System SRM 3120a

SRM 3120a Germanium (Ge) Standard Solution Ge, Germanium, spectrometry, single element solutions, pure materials, cations, metals,7440-56-4 Certificate MSDS Table Data Files Add Material to Cart Certificate

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Germanium Wafers: 2014

2020-2-12  Ge epi-ready wafers from two different vendors studied using X-ray spectroscopy. Oxide layer on all the Ge wafer surfaces formed by GeO and GeO 2; layer thickness depending on wafer vendor. Probable presence of chlorine at the wafer surfaces. Wafer surfaces from one of the vendors contaminated by carbonates.

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Germanium powder, −100 mesh, ≥99.99% trace

Germanium powder, −100 mesh, ≥99.99% trace metals basis CAS Number 7440-56-4. Empirical Formula (Hill Notation) Ge . Molecular Weight 72.64 . EC Number 231-164-3. MDL number MFCD00085310. PubChem Substance ID 24852165

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Non-homogeneous SiGe-on-insulator formed by

2014-3-20  layer is presented by discussing the highly nonuniform oxidation rate that is spatially dependent in the Ge condensation process. The results are of guiding significance for fabricating the SGOI by Ge condensation process. Keywords: SGOI, Ge condensation 1.

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In-situ non-disruptive cleaning of Ge(100) using H2O2(g

2019-11-14  In-situ non-disruptive cleaning of Ge(100) using H 2O 2(g) and Keywords: Germanium Hydrogen peroxide Atomic hydrogen Scanning tunneling microscopy X-ray photoelectron spectroscopy In-situ gas phase cleaning of the Ge(100) surface was

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Silicon (Si) and germanium (Ge) in optical devices

T1 Silicon (Si) and germanium (Ge) in optical devices. AU Ohashi, Keishi. PY 2011/2. Y1 2011/2. N2 This chapter describes optical devices which use Si, SiGe, and Ge technologies for electronics. It starts with the optical waveguides and optical resonators which create slow

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Mineralogical Distribution of Germanium, Gallium and

2017-11-10  Germanium (Ge), gallium (Ga) and indium (In) are three commodities which have become increasingly sought-after in recent years. This is largely due to their growing usage in various high-tech and green-tech applications, such as smartphones (Ga, In), optoelectronics (Ge, Ga, In), fiber

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